WebJun 29, 2024 · Herein, we experimentally demonstrate the co-existence of voltage-tunable out-of-plane (OOP) and in-plane (IP) ferroelectricity in few-layer InSe prepared by a solution-processable method and fabricate ferroelectric semiconductor channel transistors. The reversible polarization can initiate instant switch of resistance with high ON/OFF … WebA cross-sectional view of the neuristor with one in-plane gate is shown in Figure 2a. Note that the gate modulated channel conductance through two gate capacitors (C 1 and C 2) in series by the bottom conductive layer (Figure S5a,b, Supporting Information). The lateral capacitive coupling in the neuristors was studied (Figure 2b,c). Initially ...
Gate-tunable giant tunneling electroresistance in van der Waals
WebJan 20, 2024 · Here, we explore strain-tunable ferroelectric properties of group-IV monochalcogenides MX (M = Ge, Sn; X = S, Se) and their potential application in lateral … WebJun 28, 2024 · Request PDF On Jun 28, 2024, Yang Bao and others published Gate-Tunable In-Plane Ferroelectricity in Few-Layer SnS Find, read and cite all the … brian half baked gif
Gate-Tunable In-Plane Ferroelectricity in Few-Layer SnS
WebMay 27, 2024 · Fig. 2 Ferroelectric switching in parallel-stacked bilayer BN. ( A) Resistance Rxx of graphene for device P1 as a function of VT/dT, the top gate voltage VT divided by the thickness of top hBN dT. VT / dT is scanned in the backward (forward) direction starting from +0.36 V/nm (−0.36 V/nm) in the blue (red) curve. WebApr 3, 2024 · Recently, the room-temperature ferroelectricity has been unveiled in strained STO thin films; however, it remains an open question whether the strain-free freestanding 2D STO thin film is room-temperature ferroelectric or not. Here, we report the electric field-induced out-of-plane ferroelectric polarization in large-scale, freestanding, and ... WebApr 7, 2024 · The discovery of ferroelectricity in doped HfO 2 ... with a preferred tilted out-of-plane orientation along the [110] axes. ... where a conventional transistor is integrated in series with a FeFET, offering increased flexibility through gate-tunable series resistance. However, this design complicates the integration processes. To address these ... brian hall 25